std1802 low voltage fast-switching npn power transistor preliminary data n very low collector to emitter saturation voltage n high current gain characteristic n fast-switching speed n through-hole ipak (to-251) power package in tube (suffix "-1") n surface-mounting dpak (to-252) power package in tape & reel (suffix "t4") applications: n ccfl drivers n voltage regulators n relay drivers n high efficiency low voltage switching applications description the device is manufactured in npn planar technology by using a "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. ? internal schematic diagram september 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 80 v v ceo collector-emitter voltage (i b = 0) 60 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current 3 a i cm collector peak current (t p < 5 ms) 6 a i b base current 1 a p tot total dissipation at t amb = 25 o c15w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 3 dpak ( to-252) (suffix "t4") 3 2 1 ipak ( to-251) (suffix "-1") ordering code marking shipment std1802t4 d1802 tape & reel STD1802-1 d1802 tube 1/8
thermal data r thj-case thermal resistance junction-case max 8.33 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 40 v 0.1 m a i ebo emitter cut-off current (i c = 0) v eb = 4 v 0.1 m a v (br)cbo * collector-base breakdown voltage (i e = 0) i c = 100 m a 80 v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = 1 ma 60 v v (br)ebo * emitter-base breakdown voltage (i c = 0) i e = 100 m a 6v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 100 ma i c = 3 a i b = 150 ma 150 200 300 400 mv mv v be(sat) * base-emitter saturation voltage i c = 2 a i b = 100 ma 0.9 1.2 v h fe * dc current gain i c = 100 ma v ce = 2 v i c = 3 a v ce = 2 v 200 100 400 f t transition frequency v ce = 10 v i c = 50 ma 150 mhz c cbo collector-base capacitance v cb = 10 v f = 1 mhz 50 pf t on t s t f resistive load turn- on time storage time fall time i c = 1 a v cc = 30 v i b1 = - i b2 = 0.1 a 50 1.35 120 ns m s ns * pulsed: pulse duration = 300 m s, duty cycle = 1.5 % std1802 2/8
base-emitter saturation voltage base-emitter on voltage collector-emitter saturation voltage collector-emitter saturation voltage derating curve dc current gain std1802 3/8
switching times inductive load switching times resistive load switching times inductive load switching times resistive load switching times resistive load std1802 4/8
figure 1: resistive load switching test circuit. 1) fast electronic switch 2) non-inductive resistor std1802 5/8
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a3 0.70 1.30 0.028 0.051 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 b3 0.85 0.033 b5 0.30 0.012 b6 0.95 0.037 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.237 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 15.90 16.30 0.626 0.642 l 9.00 9.40 0.354 0.370 l1 0.80 1.20 0.031 0.047 l2 0.80 1.00 0.031 0.039 v1 10 o 10 o p032n_e to-251 (ipak) mechanical data std1802 6/8
dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data std1802 7/8
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